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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2965
DESCRIPTION *With TO-3 package *High breakdown voltage *Fast switching speed. *Wide area of safe operation APPLICATIONS *For switching regulator applications PINNING(see Fig.2)
PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 600 450 7 15 150 150 -55~150 UNIT V V V A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ; RBE= IC=1mA ; IE=0 IE=1mA ; IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=500V ;IE=0 VEB=5V; IC=0 IC=10A ; VCE=5V IC=2A ; VCE=10V IE=0 ; VCB=10V,f=1MHz 7 28 230 MIN 450 600 7 TYP.
2SC2965
MAX
UNIT V V V
1.5 1.5 100 100 20
V V A A
MHz pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2965
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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